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Electrochemical Investigation of Doped Titanium Dioxide

Biomedical Sciences Research Institute Computer Science Research Institute Environmental Sciences Research Institute Nanotechnology & Advanced Materials Research Institute

Hamilton, JWJ, Byrne, JA, McCullagh, C and Dunlop, PSM (2008) Electrochemical Investigation of Doped Titanium Dioxide. International Journal of Photoenergy, 2008 . p. 1. [Journal article]

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URL: http://dx.doi.org/10.1155/2008/631597

DOI: doi: 10.1155/2008/631597

Abstract

Thin films of transition-metal doped (0.2, 1.0, and 5.0 atom%) TiO2 were prepared on titanium foil using a sol-gel route catalyzed by ammonium acetate. Dopants investigated were the fourth-period transition metals. The prepared films were characterised by Raman spectroscopy, Auger electron spectroscopy, and photoelectrochemical methods. The films doped with transition metals showed a lower photocurrent response than undoped samples. No major red shift in the photocurrent response spectra of the doped films was observed. A photocurrent response was observed under visible light irradiation of the samples and was potential dependent peaking around −0.3 V (SCE), which is indicative of electron promotion from a filled defect level. Examination of the defect level potential dependence by analysis of the current-time response under chopped illumination at fixed potential (−0.8 V–+1.07 V) gave a good correlation with the potential dependence observed in the visible light irradiation studies.

Item Type:Journal article
Faculties and Schools:Faculty of Computing & Engineering
Faculty of Computing & Engineering > School of Engineering
Research Institutes and Groups:Engineering Research Institute
Engineering Research Institute > Nanotechnology & Integrated BioEngineering Centre (NIBEC)
ID Code:7433
Deposited By:Dr Jeremy Hamilton
Deposited On:20 Jan 2010 09:48
Last Modified:18 Aug 2011 11:16

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