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Enhanced electrochemical properties of arrayed CNx nanotubes directly grown on Ti-buffered silicon substrates

Biomedical Sciences Research Institute Computer Science Research Institute Environmental Sciences Research Institute Nanotechnology & Advanced Materials Research Institute

Fang, WC, Sun, CL, Huang, JH, Chen, LC, Chyan, O, Chen, KH and Papakonstantinou, P (2006) Enhanced electrochemical properties of arrayed CNx nanotubes directly grown on Ti-buffered silicon substrates. ELECTROCHEMICAL AND SOLID STATE LETTERS, 9 (3). A175-A178. [Journal article]

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DOI: 10.1149/1.2166507

Abstract

The effects of a Ti buffer layer on structural and electrochemical properties of arrayed nitrogen-containing carbon nanotubes (CNx NTs) directly grown on Si substrates have been investigated. Cyclic voltammograms using Fe(CN)(6)(3-)/Fe(CN)(6)(4-) as redox couple were measured to study the electrochemical activities of CNx NTs. The highest peak current density was achieved at an optimal Ti thickness of 20 nm owing to the good conductivity of TiSi2 and high number density of NTs. Therefore, we have demonstrated the direct growth of aligned NTs on Ti- buffered Si with improved electrochemical activity that is believed to be suitable for advanced microsystem applications. (c) 2006 The Electrochemical Society.

Item Type:Journal article
Faculties and Schools:Faculty of Computing & Engineering
Faculty of Computing & Engineering > School of Engineering
Research Institutes and Groups:Engineering Research Institute
Engineering Research Institute > Nanotechnology & Integrated BioEngineering Centre (NIBEC)
ID Code:6405
Deposited By:Professor Pagona Papakonstantinou
Deposited On:13 Jan 2010 09:44
Last Modified:18 Aug 2011 11:56

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