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Enhancement of sp(3)-bonding in high-bias-voltage grown diamond-like carbon thin films studied by x-ray absorption and photoemission spectroscopy

Biomedical Sciences Research Institute Computer Science Research Institute Environmental Sciences Research Institute Nanotechnology & Advanced Materials Research Institute

Ray, SC, Pao, CW, Tsai, HM, Chiou, JW, Pong, WF, Tsai, MH, Okpalugo, TIT, Papakonstantinou, P and Pi, TW (2007) Enhancement of sp(3)-bonding in high-bias-voltage grown diamond-like carbon thin films studied by x-ray absorption and photoemission spectroscopy. JOURNAL OF PHYSICS-CONDENSED MATTER, 19 (17). p. 176204. [Journal article]

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DOI: 10.1088/0953-8984/19/17/176204

Abstract

X-ray absorption near-edge structure (XANES) and valence- band photoemission spectroscopy (VB-PES) were used to elucidate the electronic and mechanical properties of diamond-like carbon (DLC) thin films deposited by the plasma-enhanced chemical vapour deposition method at various bias voltages (V-b) using a C2H2 vapour precursor in an Ar+ atmosphere. The increase of V-b is found to increase and decrease the contents of sp(3)- and sp(2)- bonded carbon atoms, respectively, i.e. the films become more diamond-like. The Young's modulus measurements show increases with the increase of the presence of sp3-bonded carbon atoms in the structure of the DLC films.

Item Type:Journal article
Faculties and Schools:Faculty of Computing & Engineering
Faculty of Computing & Engineering > School of Engineering
Research Institutes and Groups:Engineering Research Institute
Engineering Research Institute > Nanotechnology & Integrated BioEngineering Centre (NIBEC)
ID Code:6399
Deposited By:Professor Pagona Papakonstantinou
Deposited On:13 Jan 2010 10:54
Last Modified:18 Aug 2011 11:56

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