Magill, DP, Ogwu, AA, McLaughlin, JAD, Maguire, PD, McCullough, RW, Voulot, D and Gillen, D (2001) Electrical characteristics of nitrogen incorporated hydrogenated amorphous carbon. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-AN INTERNATIONAL JOURNAL DEVOTED TO VACUUM SURFACES AND FILMS, 19 (5). pp. 2456-2462. [Journal article]
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Nitrogen incorporation into hydrogenated amorphous carbon (a-C:H) films has recently attracted a wide range of interest due to its contribution in reducing film stress and improving field emission properties. In this work we characterize the electrical properties of nitrogen containing a-C:H films. The a-C:H films were prepared by plasma, enhanced, chemical vapor deposition in an acetylene (C2H2) environment, with a range of bias voltages. Nitrogen incorporation was achieved by exposing the films to an atomic nitrogen flux from a rf plasma with up to 40% dissociation and atomic nitrogen fluxes of up to 0.85 X 10(18) atoms s(-1). Raman results indicate that the doping process is accompanied by some structural changes seen by the G-band peak shifts. X-ray photoelectron spectroscopy spectra suggest that the dopant levels exceed those previously reported. Capacitance probe and I-V techniques showed a decrease in contact potential difference and density of states for doped films, indicating a rise in the Fermi level. (C) 2001 American Vacuum Society.
|Item Type:||Journal article|
|Faculties and Schools:||Faculty of Computing & Engineering|
Faculty of Computing & Engineering > School of Engineering
|Research Institutes and Groups:||Engineering Research Institute|
Engineering Research Institute > Nanotechnology & Integrated BioEngineering Centre (NIBEC)
|Deposited By:||Mrs Ann Blair|
|Deposited On:||14 Sep 2009 11:31|
|Last Modified:||15 Jun 2011 10:51|
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