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Electronic structure and hardening mechanism of Si-doped/undoped diamond-like carbon films

Biomedical Sciences Research Institute Computer Science Research Institute Environmental Sciences Research Institute Nanotechnology & Advanced Materials Research Institute

Ray, SC, Okpalugo, TIT, Papakonstantinou, P, Bao, CW, Tsai, HM, Chiou, JW, Jan, JC, Pong, WF, McLaughlin, JAD and Wang, WJ (2005) Electronic structure and hardening mechanism of Si-doped/undoped diamond-like carbon films. THIN SOLID FILMS, 482 (1-2). pp. 242-247. [Journal article]

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URL: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TXC-4GFD0MH-1-F&_cdi=5587&_user=126978&_orig=browse&_coverDate=10%2F06%2F2005&_sk=999599989&view=c&wchp=dGLzVlz-zSkzV&md5=035a242dde8668e684e81a7f796d8249&ie=/sdarticle.pdf

DOI: 10.1016/j.tsf.2004.11.152

Abstract

In this article, we have investigated the electronic structures of silicon-doped and undoped diamond-like carbon (DLC) thin films using Fourier transform infrared (FTIR) spectra, Raman spectra, photoluminescence (PL), and X-ray absorption near edge structure (XANES) spectroscopy. The films were deposited by Plasma-Enhanced Chemical Vapour Deposition (PECVD) method in argon atmosphere using C2H2 and/or Si(CH3)(4) vapour precursors. Raman spectra displayed a decrease in (I-D/I-G) ratio for films synthesized using Si(CH3)4 vapour, indicative of the formation of more diamond-like (sp(3) rich) films. The PL intensities and the full width at half maximum (FWHM) of the PL band increased, whereas PL peak position shifted towards lower energies when the Si incorporation was increased in the film. FTIR spectra revealed an increase in Si-H-n and C-H-n bonding intensity at 2100 cm(-1) and 2900 cm(-1), respectively, with increased Si incorporation. Hardness as well as the Young's modulus changed with not only the sp(2) content present in the film, but also decrease in the three-dimensional interlinks of the C-C atomic bond structure by the C-H-n and Si-H-n, weaker bonds. (c) 2004 Elsevier B.V. All rights reserved.

Item Type:Journal article
Keywords:DLC thin film; FTIR; Raman; XANES
Faculties and Schools:Faculty of Computing & Engineering
Faculty of Computing & Engineering > School of Engineering
Research Institutes and Groups:Engineering Research Institute
Engineering Research Institute > Nanotechnology & Integrated BioEngineering Centre (NIBEC)
ID Code:291
Deposited By:Mrs Ann Blair
Deposited On:19 Oct 2009 13:21
Last Modified:21 Feb 2014 14:39

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