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NEXAFS study and electrical properties of nitrogen-incorporated tetrahedral amorphous carbon films

Biomedical Sciences Research Institute Computer Science Research Institute Environmental Sciences Research Institute Nanotechnology & Advanced Materials Research Institute

McCann, R, Roy, SS, Papakonstantinou, P, Ahmad, I, Maguire, PD, McLaughlin, JAD, Petaccia, L, Lizzit, S and Goldoni, A (2005) NEXAFS study and electrical properties of nitrogen-incorporated tetrahedral amorphous carbon films. DIAMOND AND RELATED MATERIALS, 14 (3-7, Sp. Iss. SI). pp. 1057-1061. [Journal article]

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URL: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TWV-4FM5CXY-1-1&_cdi=5572&_user=126978&_orig=search&_coverDate=07%2F31%2F2005&_sk=999859996&view=c&wchp=dGLbVlb-zSkzk&md5=11930d3e8d359b75da147539314645ad&ie=/sdarticle.pdf

DOI: 10.1016/j.diamond.2005.01.032

Abstract

Tetrahedral amorphous carbon nitride (ta-C:N) films obtained by filtered cathodic vacuum arc deposition have been investigated by Near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The C K (carbon K) edge NEXAFS spectra clearly revealed the increase of C=N bonds with the increase of nitrogen concentration. The C K edge NEXAFS analysis further showed that the content of the surface defect (mainly C-H bonds) decreased with the increase of nitrogen in the films. As the nitrogen concentration increased a pronounced change in the pi* features were observed at the N K (nitrogen K) edge. The origin of the N K edge pi* peaks are mainly due to the formation of C-N bonds and nitrogen substitution in the graphite network. Polarization dependent NEXAFS measurements showed an angular distribution of CN bonds. The electrical resistivity of the ta-C:N films decreased at higher nitrogen concentration and this may be from the development of graphite-like structures in these films. The electrical measurements were confirmed further with electrochemical measurements. (c) 2005 Elsevier B.V. All rights reserved.

Item Type:Journal article
Keywords:carbon nitride; thin film; NEXAFS; electrical
Faculties and Schools:Faculty of Computing & Engineering
Faculty of Computing & Engineering > School of Engineering
Research Institutes and Groups:Engineering Research Institute
Engineering Research Institute > Nanotechnology & Integrated BioEngineering Centre (NIBEC)
ID Code:286
Deposited By:Mrs Ann Blair
Deposited On:19 Oct 2009 13:16
Last Modified:07 Apr 2014 14:52

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