McCann, R, Roy, SS, Papakonstantinou, P, Ahmad, I, Maguire, PD, McLaughlin, JAD, Petaccia, L, Lizzit, S and Goldoni, A (2005) NEXAFS study and electrical properties of nitrogen-incorporated tetrahedral amorphous carbon films. DIAMOND AND RELATED MATERIALS, 14 (3-7, Sp. Iss. SI). pp. 1057-1061. [Journal article]
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Tetrahedral amorphous carbon nitride (ta-C:N) films obtained by filtered cathodic vacuum arc deposition have been investigated by Near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The C K (carbon K) edge NEXAFS spectra clearly revealed the increase of C=N bonds with the increase of nitrogen concentration. The C K edge NEXAFS analysis further showed that the content of the surface defect (mainly C-H bonds) decreased with the increase of nitrogen in the films. As the nitrogen concentration increased a pronounced change in the pi* features were observed at the N K (nitrogen K) edge. The origin of the N K edge pi* peaks are mainly due to the formation of C-N bonds and nitrogen substitution in the graphite network. Polarization dependent NEXAFS measurements showed an angular distribution of CN bonds. The electrical resistivity of the ta-C:N films decreased at higher nitrogen concentration and this may be from the development of graphite-like structures in these films. The electrical measurements were confirmed further with electrochemical measurements. (c) 2005 Elsevier B.V. All rights reserved.
|Item Type:||Journal article|
|Keywords:||carbon nitride; thin film; NEXAFS; electrical|
|Faculties and Schools:||Faculty of Computing & Engineering|
Faculty of Computing & Engineering > School of Engineering
|Research Institutes and Groups:||Engineering Research Institute|
Engineering Research Institute > Nanotechnology & Integrated BioEngineering Centre (NIBEC)
|Deposited By:||Mrs Ann Blair|
|Deposited On:||19 Oct 2009 13:16|
|Last Modified:||21 Feb 2014 14:31|
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