Ray, SC, Okpalugo, TIT, Pao, CW, Tsai, HM, Chiou, JW, Jan, JC, Pong, WF, Papakonstantinou, P, McLaughlin, JAD and Wang, WJ (2005) Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si : DLC) thin films. MATERIALS RESEARCH BULLETIN, 40 (10). pp. 1757-1764. [Journal article]
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We have investigated the electronic and bonding structure using Fourier-transform infra-red (FT-IR) spectra and studied photoluminescence (PL) from micro-Raman spectra analysis of a-C:H:Si (Si:DLC) thin films deposited by plasma enhanced chemical vapour deposition (PECVD) method. Tetramethylsilane [Si(CH3)(4), TMS] vapour was used as Silicon precursor and a bias voltage of 400 V was applied during deposition. It is observed from FT-IR spectra that with increasing TMS flow rate, the intensity of Si-H-n and C-H-n modes is increased significantly. PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition. (C) 2005 Elsevier Ltd. All rights reserved.
|Item Type:||Journal article|
|Keywords:||thin film; vapour deposition; infrared spectroscopy; luminescence|
|Faculties and Schools:||Faculty of Computing & Engineering|
Faculty of Computing & Engineering > School of Engineering
|Research Institutes and Groups:||Engineering Research Institute|
Engineering Research Institute > Nanotechnology & Integrated BioEngineering Centre (NIBEC)
|Deposited By:||Mrs Ann Blair|
|Deposited On:||19 Oct 2009 13:12|
|Last Modified:||11 Oct 2013 09:34|
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