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Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors

Biomedical Sciences Research Institute Computer Science Research Institute Environmental Sciences Research Institute Nanotechnology & Advanced Materials Research Institute

Golan, G, Rabinovich, E, Inberg, A, Axelevitch, A, Lubarsky, G, Rancoita, P, Demarchi, M, Seidman, A and Croitoru, N (2001) Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors. Microelectronics Reliability, 41 (1). p. 67. [Journal article]

Full text not available from this repository.

URL: http://dx.doi.org/10.1016/S0026-2714(00)00212-2

DOI: doi:10.1016/S0026-2714(00)00212-2


Item Type:Journal article
Faculties and Schools:Faculty of Computing & Engineering
Faculty of Computing & Engineering > School of Engineering
Research Institutes and Groups:Engineering Research Institute
Engineering Research Institute > Nanotechnology & Integrated BioEngineering Centre (NIBEC)
ID Code:19778
Deposited By:Dr Gennady Lubarsky
Deposited On:06 Sep 2011 15:47
Last Modified:06 Sep 2011 15:47

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