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Nitrogen doping of amorphous DLC films by rf plasma dissociated nitrogen atom surface bombardment in a vacuum

Biomedical Sciences Research Institute Computer Science Research Institute Environmental Sciences Research Institute Nanotechnology & Advanced Materials Research Institute

Ogwu, AA, Magill, D, Maguire, PD, McLaughlin, JAD, McCullough, RW and Voulot, D (2000) Nitrogen doping of amorphous DLC films by rf plasma dissociated nitrogen atom surface bombardment in a vacuum. Surface Engineering, 16 (5). p. 427. [Journal article]

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URL: http://dx.doi.org/10.1179/026708400101517422

DOI: doi:10.1179/026708400101517422


Interpretations of recent (1999) theoretical first principles calculations in the literature based on the density functional theory using the local density approximation has led to suggestions that a low energy nitrogen surface bombardment of amorphous carbon films should lead to a reduction in the work function of the films. By applying a low energy nitrogen flux generated by a nitrogen plasma source to the surface of amorphous diamondlike carbon (DLC, a-C : H) films prepared by plasma enhanced chemical vapour deposition (PEVCD) in a vacuum, relatively high non-bonded nitrogen doping levels have been observed compared with DLC films prepared by other methods reported in the literature. The amorphous DLC films have been characterised by X-ray photoelectron spectroscopy and Raman spectroscopy before and after nitrogen bombardment. This novel processing route is expected to have an impact on residual stress relief and the field emission properties of amorphous DLC.

Item Type:Journal article
Faculties and Schools:Faculty of Computing & Engineering
Faculty of Computing & Engineering > School of Engineering
Research Institutes and Groups:Engineering Research Institute
Engineering Research Institute > Nanotechnology & Integrated BioEngineering Centre (NIBEC)
ID Code:15555
Deposited By:Mrs Ann Blair
Deposited On:16 Sep 2010 14:09
Last Modified:16 Sep 2010 14:09

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