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The Role of an Electrolysis Reduction in Copper-Electroplating on Transparent Semiconductor Tin Oxide

Biomedical Sciences Research Institute Computer Science Research Institute Environmental Sciences Research Institute Nanotechnology & Advanced Materials Research Institute

Liu, JS, Laverty, SJ, Maguire, PD, McLaughlin, JAD and Molloy, J (1994) The Role of an Electrolysis Reduction in Copper-Electroplating on Transparent Semiconductor Tin Oxide. Journal of The Electrochemical Society, 141 (4). L38. [Journal article]

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URL: http://dx.doi.org/10.1149/1.2054872

DOI: doi:10.1149/1.2054872

Abstract

An electroplating process has been employed to grow high-quality thin films of copper on tin oxide transparent semiconductor withexcellent adhesion. It is shown that electrolysis reduction as a surface modification process prior to the electrodeposition is essential forgood adhesion of the resulting copper coating. Experimental results obtained for electrolysis, argon plasma cleaning, and surface roughnessmeasurements indicate that the formation of a monolayer of low valence tin oxide may be significant to the improvements in plating processand deposit adhesion. A mechanism whereby SnOx formation may facilitate improved adhesion is proposed.

Item Type:Journal article
Faculties and Schools:Faculty of Computing & Engineering
Faculty of Computing & Engineering > School of Engineering
Research Institutes and Groups:Engineering Research Institute
Engineering Research Institute > Nanotechnology & Integrated BioEngineering Centre (NIBEC)
ID Code:13945
Deposited By:Mrs Ann Blair
Deposited On:28 May 2010 12:43
Last Modified:15 Jun 2011 10:52

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